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Philips Semiconductors
Preliminary specification
PowerMOS transistors Avalanche energy rated
FEATURES
* Repetitive Avalanche Rated * Fast switching * Stable off-state characteristics * High thermal cycling performance * Low thermal resistance
PHP11N50E, PHB11N50E, PHW11N50E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 500 V
g
ID = 10.4 A RDS(ON) 0.6
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP11N50E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHW11N50E is supplied in the SOT429 (TO247) conventional leaded package. The PHB11N50E is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab DESCRIPTION gate drain1 source
SOT78 (TO220AB)
tab
SOT404
tab
SOT429 (TO247)
2
drain
1 23
1
3
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 C to 150C Tj = 25 C to 150C; RGS = 20 k Tmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 500 500 30 10.4 6.6 42 156 150 UNIT V V V A A A W C
1 It is not possible to make connection to pin 2 of the SOT404 package. January 1998 1 Rev 1.000
Philips Semiconductors
Preliminary specification
PowerMOS transistors Avalanche energy rated
AVALANCHE ENERGY LIMITING VALUES
PHP11N50E, PHB11N50E, PHW11N50E
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS EAR IAS, IAR Non-repetitive avalanche energy Repetitive avalanche energy2 Repetitive and non-repetitive avalanche current CONDITIONS Unclamped inductive load, ID = 10.4 A; VDD 50 V; starting Tj = 25C; RGS = 50 ; VGS = 10 V MIN. MAX. 676 16.9 10.4 UNIT mJ mJ A
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT78 package, in free air SOT429 package, in free air SOT404 package, pcb mounted, minimum footprint TYP. MAX. UNIT 60 45 50 0.8 K/W K/W K/W K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 C unless otherwise specified SYMBOL PARAMETER Drain-source breakdown voltage V(BR)DSS / Drain-source breakdown voltage temperature Tj coefficient RDS(ON) Drain-source on resistance Gate threshold voltage VGS(TO) gfs Forward transconductance IDSS Drain-source leakage current IGSS Qg(tot) Qgs Qgd td(on) tr td(off) tf Ld Ld Ls Ciss Coss Crss V(BR)DSS CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 0.25 mA MIN. 500 2.0 4 TYP. MAX. UNIT 0.1 0.5 3.0 7 1 60 10 120 8 65 22 70 145 84 3.5 4.5 7.5 1400 220 125 0.6 4.0 25 500 200 150 10 85 V %/K V S A A nA nC nC nC ns ns ns ns nH nH nH pF pF pF
VGS = 10 V; ID = 5.2 A VDS = VGS; ID = 0.25 mA VDS = 30 V; ID = 5.2 A VDS = 500 V; VGS = 0 V VDS = 400 V; VGS = 0 V; Tj = 125 C Gate-source leakage current VGS = 30 V; VDS = 0 V Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance ID = 10.4 A; VDD = 400 V; VGS = 10 V VDD = 250 V; RD = 22 ; RG = 5.6 Measured from tab to centre of die Measured from drain lead to centre of die (SOT78 and SOT429 packages only) Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
2 pulse width and repetition rate limited by Tj max. January 1998 2 Rev 1.000
Philips Semiconductors
Preliminary specification
PowerMOS transistors Avalanche energy rated
PHP11N50E, PHB11N50E, PHW11N50E
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS Tmb = 25C Tmb = 25C IS = 10.4 A; VGS = 0 V IS = 10.4 A; VGS = 0 V; dI/dt = 100 A/s MIN. TYP. MAX. UNIT 600 9 10.4 42 1.2 A A V ns C
January 1998
3
Rev 1.000
Philips Semiconductors
Preliminary specification
PowerMOS transistors Avalanche energy rated
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
PHP11N50E, PHB11N50E, PHW11N50E
4,5 max 10,3 max
1,3
3,7 2,8
5,9 min
15,8 max
3,0 max not tinned
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,9 max (3x)
0,6 2,4
Fig.1. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8".
January 1998
4
Rev 1.000
Philips Semiconductors
Preliminary specification
PowerMOS transistors Avalanche energy rated
MECHANICAL DATA
Dimensions in mm Net Mass: 1.4 g
10.3 max
PHP11N50E, PHB11N50E, PHW11N50E
4.5 max 1.4 max
11 max 15.4
2.5 0.85 max (x2) 2.54 (x2)
0.5
Fig.2. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5 2.0
3.8
5.08
Fig.3. SOT404 : soldering pattern for surface mounting.
Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8".
January 1998
5
Rev 1.000
Philips Semiconductors
Preliminary specification
PowerMOS transistors Avalanche energy rated
MECHANICAL DATA
Dimensions in mm Net Mass: 5 g
16 max
PHP11N50E, PHB11N50E, PHW11N50E
5.3 max 1.8 5.3 7.3 o 3.5 max
3.5 21 max 15.5 max seating plane
2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M
15.5 min
Fig.4. SOT429; pin 2 connected to mounting base.
Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT429 envelope. 3. Epoxy meets UL94 V0 at 1/8".
January 1998
6
Rev 1.000
Philips Semiconductors
Preliminary specification
PowerMOS transistors Avalanche energy rated
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
PHP11N50E, PHB11N50E, PHW11N50E
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
January 1998
7
Rev 1.000

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